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Ion Beam Sputtering System (IBS)

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Ion Beam Sputtering System (IBS)


This equipment adopts sputtering ion source + auxiliary ion source and multi-target coating materials.Applying RF ion beam sputtering deposition technology, and under the control of crystal or optical film thickness monitoring system,
it can batch-produce high-precision multi-layer optical thin film devices.It is widely used in the mass production of optical communication filters (LAN-WDM, MWDM, DWDM100G), semiconductor chips,
UV coatings, laser-resistant coatings with high damage threshold, and other products.


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Performance of Main Key Components

  • Target Mechanism

    2 to 4 targets replaceable
    25mm movable left and right
    Target rotation accuracy <0.1°

  • Crystal Film Thickness Monitoring System

    Correction plate rotation accuracy <0.1°
    Equipped with 6 adjustable correction plates
    6-probe crystal control
    Crystal film thickness gauge XTC-3

  • Substrate Mechanism

    1×12 inch (single-disc high-speed transmission structure) - workpiece speed 10~1000 rpm
    4×8 inch (planetary gear transmission structure) - workpiece speed 0~30 rpm

  • Optical Monitoring System (OMS)

    Dual optical path laser/white light control
    Optical signal stability <0.15/000s


Technical Parameters

Vacuum Chamber DimensionsDiameter 1040 mm, Height 890 mm
Ultimate VacuumBelow 4.0E-5 Pa
Leak Rate≤5E-9 Pa·m³/s (Helium leak rate) / Pressure holding ≤5 Pa for 12 hours
Vacuum RecoveryReach 1.1E-3 Pa within 40 mins (without heating)
Main Ion SourceRF ion source, 16 cm, three-focus convergent ion beam
Auxiliary Ion SourceRF ion source, 8 cm or 12 cm, three-piece divergent ion beam
Sputtering Target SystemAdjustable left and right (±25 mm), configurable with 2-4 targets, size 14 inch
Installation SiteInstallation space: Standard size 2500 mm (W) × 3000 mm (D) × 2850 mm (H)
Floor load capacity >800 kg per square meter


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