Magnetron Sputtering Coating Machine

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Magnetron Sputtering Coating Machine


This equipment adopts DC pulse / MF magnetron sputtering / RF magnetron sputtering technology.Target materials include metals (Ta, Nb, Al, etc.) and semiconductors (Si, etc.).Equipped with a high-performance PAS ion source, it can reactively deposit oxide and nitride films.It is mainly used for the mass production of biomedical fluorescence filters and optical communication filters (DWDM 100G).


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DWDM100G

Technical Parameters

Unit

Specifications

CentralWavelength

nm

ITU Grid

Passband Bandwidth

nm

>=0.42

PeakInsertionLoss

dB

<=0.25

PassbandInsertionLoss

dB

<=0.5

Passband Ripple

dB

<=0.25

Stopband Bandwidth

nm

<=1.18

ReflectionIsolation@ Passband

dB

>=13.5

Stopband Bandwidth Isolation

dB

>=30

ThermalWavelength Drift

pm/℃

<1

IncidentAngle(AOI)

degree

1.8

Polarization DependentLoss(PDL)

dB

<=0.05

Polarization ModeDispersion(PMD)

PS

<=0.1

ArReflectance

%

<=0.2

Substrate Material


Customer Specified

Dimensions

mm

1.4*1.4*1.0 (or Customer Specified)

Scratch/dig


40/20

WedgeAngle Between TwoSurface

degree

Customer Specified

Operation Temperature

−20~70

Storage Temperature

−40~85

Technical Parameters

Vacuum Chamber Dimensions965.4 mm × 1117.6 mm × 685.8 mm
Ultimate VacuumBelow 4E-5 Pa
Leak Rate≤5E-9 Pa·m³/s (Helium leak rate) / Pressure holding ≤5 Pa for 12 hours
Vacuum RecoveryReach 3E-4 Pa within 100 mins (without heating)
Substrate Rotation MechanismCentral drive, rotation speed adjustable: 0–1000 rpm
Substrate Tray Size150 mm or 304 mm (select one)
Optical Control SystemGILITEK transmission optical control system (laser/white light optional, for any film thickness monitoring)
Cathode Targets① 2×8" targets + 1×6" target + RF source ② 4×8" dual-target co-sputtering (select one)