Technical Parameters
| Ultimate Pressure | Sample Chamber: 5E-4 Pa; Transfer Chamber: 8E-5 Pa; Process Chamber: 8E-5 Pa |
| Pumping Speed | Sample Chamber: ≤10 min (from atmosphere to 10 Pa) Transfer & Process Chambers: ≤40 min (from atmosphere to 5E-3 Pa) |
| Substrate Size | 12 pcs/batch, max. diameter 200 mm × thickness 50 mm |
| Reaction Source | ICP |
| Sputtering Source | Single & Dual Rotatable Cathodes |
| Sputtering Power Supply | MF / DC Pulse / RF Power Supply |
| Optical Control Range | 400–1700 nm |
| Coating Uniformity | Natural uniformity ≤5%; uniformity with correction plate ≤1% |
| Vacuum System | Dry Pump + Molecular Pump or Dry Pump + Cryopump; Wafer Transfer Failure Rate: ≤1% |
| Equipment Dimensions | 6000 mm (W) × 6500 mm (D) × 3500 mm (H) |