Process Chamber Dimensions

Diameter 1040mm, Height 960mm

Ultimate Vacuum

Below 4.0E-5Pa

Leak Rate

≤5E-9Pa·m³/s (Helium Leak Rate) / Pressure Holding ≤5Pa for 12 Hours

Substrate Size

Max. 12 Inches

Ion Source System

16cm RF Main Source + 12cm RF Auxiliary Source

Sputtering Target System

Equipped with 4 Square Targets (Adjustable Target Positions)

Film Thickness System

Transmission Optical Monitoring System / In-line Crystal Oscillator System

Film Thickness Uniformity

≤±0.5% (Beyond Radius 70mm)

Vacuum System

Dry Pump + Molecular Pump or Dry Pump + Cryopump

Wafer Transfer Failure Rate

≤1%

Equipment Dimensions

3500 mm (W) × 2200 mm (D) × 2750 mm (H)