Magnetron Sputtering Coating Machine

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Magnetron Sputtering Coating Machine


This equipment adopts DC pulse / MF magnetron sputtering / RF magnetron sputtering technology.Target materials include metals (Ta, Nb, Al, etc.) and semiconductors (Si, etc.).Equipped with a high-performance PAS ion source, it can reactively deposit oxide and nitride films.It is mainly used for the mass production of biomedical fluorescence filters and optical communication filters (DWDM 100G).


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DWDM100G Parameters

Technical ParametersUnitSpecifications
Central WavelengthnmITU Grid
Passband Bandwidthnm≥0.42
Peak Insertion LossdB≤0.25
Passband Insertion LossdB≤0.5
Passband RippledB≤0.25
Stopband Bandwidthnm≤1.18
Reflection Isolation @ PassbanddB≥13.5
Stopband Bandwidth IsolationdB≥30
Thermal Wavelength Driftpm/℃<1
Incident Angle (AOI)degree1.8
Polarization Dependent Loss (PDL)dB≤0.05
Polarization Mode Dispersion (PMD)ps≤0.1
AR Reflectance%≤0.2
Substrate Material-Customer Specified
Dimensionsmm1.4×1.4×1.0 (or Customer Specified)
Scratch/Dig-40/20
Wedge Angle Between Two SurfacesdegreeCustomer Specified
Operation Temperature−20 ~ 70
Storage Temperature−40 ~ 85

Technical Parameters

Vacuum Chamber Dimensions965.4 mm × 1117.6 mm × 685.8 mm
Ultimate VacuumBelow 4E-5 Pa
Leak Rate≤5E-9 Pa·m³/s (Helium leak rate) / Pressure holding ≤5 Pa for 12 hours
Vacuum RecoveryReach 3E-4 Pa within 100 mins (without heating)
Substrate Rotation MechanismCentral drive, rotation speed adjustable: 0–1000 rpm
Substrate Tray Size150 mm or 304 mm (select one)
Optical Control SystemGILITEK transmission optical control system (laser/white light optional, for any film thickness monitoring)
Cathode Targets① 2×8" targets + 1×6" target + RF source ② 4×8" dual-target co-sputtering (select one)