| Item | Technical Parameters |
| Process Temperature | 50～300 ℃ |
| Film Thickness Uniformity | Within wafer / Between wafers ≤2% |
| Coating Area | Supports 4/6/8/12 inch, or 300×300 mm (backward compatible) |
| Precursors | DIPAS, TiCl₄, TMA, etc. |
| Base Vacuum | ≤1 Pa |
| Leak Rate | 5.0×10⁻⁹ Pa·m³/s |
| Chemical Source Configuration | 2 chemical channels + 1 oxygen channel (optional) |
| Footprint | 1830×1250×1400 mm |
| Substrate Size | 4/6/8/12 inch, 300×300 mm and other specifications available |
| Functions | ALD deposition of SiO₂, TiOx, Al₂O₃ and other thin films |